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| MJD112 NPN Silicon Darlington Transistor November 2006 MJD112 NPN Silicon Darlington Transistor Features * High DC Current Gain * Built-in a Damper Diode at E-C * Lead Formed for Surface Mount Applications (No Suffix) Equivalent Circuit C tm B 1 D-PAK 2.Collector 3.Emitter R1 R2 E 1.Base R1 10k R2 0.6k Absolute Maximum Ratings* Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Ta = 25C unless otherwise noted Parameter Value 100 100 5 2 4 50 20 1.75 150 - 65 ~ 150 Units V V V A A mA W W C C Collector Dissipation (TC=25C) Collector Dissipation (Ta=25C) Junction Temperature Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics* Ta=25C unless otherwise noted Symbol VCEO(sus) ICEO ICBO IEBO hFE Parameter Collector-Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Test Condition IC = 30mA, IB = 0 VCE = 50V, IB = 0 VCB = 100V, IB = 0 VEB = 5V, IC = 0 VCE = 3V, IC = 0.5A VCE = 3V, IC = 2A VCE = 3V, IC = 4A IC = 2A, IB = 8mA IC = 4A, IB = 40mA IC = 4A, IB = 40mA VCE = 3A, IC = 2A VCE = 10V, IC = 0.75A VCB = 10V, IE = 0 f = 0.1MHz Min. 100 Max. 20 20 2 Units V A A mA 500 1000 200 12K 2 3 4 2.8 V V V V MHz 100 pF VCE(sat) VBE(sat) VBE(on) fT Cob * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance 25 * Pulse Test: Pulse Width300s, Duty Cycle2% (c)2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com MJD112 Rev. B MJD112 NPN Silicon Darlington Transistor Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10000 10 VCE = 3V IC = 250 IB hFE, DC CURRENT GAIN VBE(sat) 1 1000 VCE(sat) 100 0.1 10 0.01 0.1 1 10 0.01 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 10 VCC=30V IC=250IB Cob[pF], CAPACITANCE 100 tR,tD(s), TURN ON TIME 1 10 tR tD 1 0.1 1 10 100 0.1 0.01 0.1 1 10 VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Collector Output Capacitance Figure 4. Turn On Time 10 10 IC[A], COLLECTOR CURRENT VCC=30V IC=250IB 10 s 0 tSTG,tF[S], TURN OFF TIME tSTG 1 DC 1 5m ms s 1 tF 0.1 0.1 0.01 0.01 0.1 1 10 1 10 100 1000 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Turn Off Time Figure 6. Safe Operating Area 2 MJD112 Rev. B www.fairchildsemi.com MJD112 NPN Silicon Darlington Transistor Typical Characteristics (Continued) 25 PC[W], POWER DISSIPATION 20 15 10 5 0 0 25 50 o 75 100 125 150 175 TC[ C], CASE TEMPERATURE Figure 1. Power Derating 3 MJD112 Rev. B www.fairchildsemi.com MJD112 NPN Silicon Darlington Transistor Mechanical Dimensions D-PAK 6.60 0.20 5.34 0.30 (0.50) (4.34) (0.50) 0.70 0.20 2.30 0.10 0.50 0.10 0.60 0.20 6.10 0.20 2.70 0.20 9.50 0.30 0.91 0.10 0.80 0.20 MAX0.96 2.30TYP [2.300.20] 0.76 0.10 2.30TYP [2.300.20] 0.89 0.10 0.50 0.10 1.02 0.20 2.30 0.20 (0.70) (0.90) (0.10) (3.05) 6.10 0.20 9.50 0.30 2.70 0.20 (2XR0.25) 0.76 0.10 Dimensions in Millimeters 4 MJD112 Rev. B (1.00) 6.60 0.20 (5.34) (5.04) (1.50) MIN0.55 www.fairchildsemi.com MJD112 NPN Silicon Darlington Transistor MJD112 NPN Silicon Darlington Transistor FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACT(R) FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHC(R) UltraFET(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I21 5 MJD112 Rev. B www.fairchildsemi.com |
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